STGW50HF60SD STMicroelectronics, STGW50HF60SD Datasheet - Page 3

• Manufacturer Part Number: STGW50HF60SD
• Description: IGBT 600V 60A TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW50HF60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A
• Current - Collector (ic) (max): 110A
• Power - Max: 284W
• Input Type: Standard
• Mounting Type: *
• Package / Case: *
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 284W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed
• Other names: 497-11089-5

STGW50HF60SD
2
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
CE(sat)
I
I
=25°C unless otherwise specified)
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 16818 Rev 2
I
V
V
T
V
V
V
V
V
V
I
C
C
GE
GE
GE
J
CE
CE
CE
CE
CE
CE
= 30 A,V
= 1 mA
=125 °C
= V
= 15 V, I
= 15 V, I
=600 V
=600 V,
= 15 V
=± 20 V
= 25 V, f = 1 MHz, V
= 480 V,
Test conditions
Test conditions
GE
, I
,
GE
C
I
C
C
T
C
= 250 µA
=15 V
= 30 A
= 30 A,
= 30 A
J
=125 °C
GE
=0
Electrical characteristics
Min.
600
Min.
3.5
-
-
Typ.
1.15
1.05
4300
Typ. Max.
25
400
100
200
27
90
± 100
Max.
1.45
500
5.7
50
-
-
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
V
V
V
V
S
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