STGW50HF60SD STMicroelectronics, STGW50HF60SD Datasheet - Page 6

• Manufacturer Part Number: STGW50HF60SD
• Description: IGBT 600V 60A TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW50HF60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A
• Current - Collector (ic) (max): 110A
• Power - Max: 284W
• Input Type: Standard
• Mounting Type: *
• Package / Case: *
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 284W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed
• Other names: 497-11089-5

Electrical characteristics
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Figure 8.
Figure 10. Switching losses vs collector
Figure 12. Switching losses vs temperature
E
E
V
1000
1000
(V)
(µJ)
(µJ)
12
100
100
GE
16
8
4
0
0
5
25
Gate charge vs gate-emitter voltage Figure 9.
current
E
E
on
E
E
40
off
on
off
10
50
80
V
V
V
GE
CC
15
CC
I
=400V, I
=15V, R
C
120
=30A
=480V
V
V
75
CC
GE
=15V, T
=400V, R
20
G
160
C
=10Ω
=30A
100
J
=125°C
G
25
200
=10Ω
I
C
Doc ID 16818 Rev 2
(A)
Q
AM08883v1
AM08885v1
AM08881v1
g
T
(nC)
J
(°C)
Figure 11. Switching losses vs gate resistance
Figure 13.
0.01
(A)
0.1
10
I
1000
E
C
1
1000
0.1
100
(pF)
(µJ)
10
100
C
0
0.1
Capacitance variations
Turn-off SOA
E
E
f=1MHz
V
off
on
1
GE
20
=0
1
V
10
V
40
GE
CC
T
R
V
10
=400V, I
=15V, T
J
GE
G
=150°C
=10Ω
=15V
60
100
J
STGW50HF60SD
C
=125°C
100
=30A
80
V
CE
V
(V)
CE
AM08882v1
AM08886v1
AM08884v1
(V)
R
Cres
Cies
Coes
G
(Ω)