STGW50HF60SD STMicroelectronics, STGW50HF60SD Datasheet - Page 8

• Manufacturer Part Number: STGW50HF60SD
• Description: IGBT 600V 60A TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW50HF60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.45V @ 15V, 30A
• Current - Collector (ic) (max): 110A
• Power - Max: 284W
• Input Type: Standard
• Mounting Type: *
• Package / Case: *
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 284W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed
• Other names: 497-11089-5

Test circuits
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Figure 15. Test circuit for inductive load
Figure 17. Switching waveform
V
CE
V
G
I
C
Test circuits
switching
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
10%
90%
Doc ID 16818 Rev 2
AM01504v1
AM01506v1
90%
10%
Figure 16. Gate charge test circuit
Figure 18. Diode recovery time waveform
I
F
I
RRM
di/dt
t
a
dv/dt
t
rr
t
STGW50HF60SD
b
Q
I
V
RRM
F
rr
AM01505v1
AM01507v1
t