BFS17,235 NXP Semiconductors, BFS17,235 Datasheet - Page 4
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BFS17,235
Manufacturer Part Number
BFS17,235
Description
TRANS NPN 15V 25MA 1GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFS17215.pdf
(8 pages)
Specifications of BFS17,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
V
V
(GHz)
CE
CE
h FE
f T
Fig.4
100
= 1 V; T
= 5 V; f = 500 MHz; T
50
0
2
1
0
Fig.2
0
0
j
= 25 C.
Transition frequency as a function of
collector current.
DC current gain as a function of
collector current.
10
10
j
= 25 C.
20
20
I C (mA)
I C (mA)
MEA393
MEA395
30
30
4
handbook, halfpage
handbook, halfpage
I
V
E
CE
C c
(pF)
= i
(dB)
Fig.3
Fig.5
2.0
1.6
1.2
0.8
0.4
F
= 5 V; R
e
10
0
5
0
= 0; f = 1 MHz; T
0
0
S
Collector capacitance as a function of
collector-base voltage.
Minimum noise figure as a function of
collector current.
= 50 ; f = 500 MHz; T
4
j
10
= 25 C.
8
j
12
= 25 C.
20
Product specification
V CB (V)
16
I C (mA)
MEA396
MEA397
BFS17
20
30