BFS17,235 NXP Semiconductors, BFS17,235 Datasheet - Page 4

• Manufacturer Part Number: BFS17,235
• Description: TRANS NPN 15V 25MA 1GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
V
V
(GHz)
CE
CE
h FE
f T
Fig.4
100
= 1 V; T
= 5 V; f = 500 MHz; T
50
0
2
1
0
Fig.2
0
0
j
= 25 C.
Transition frequency as a function of
collector current.
DC current gain as a function of
collector current.
10
10
j
= 25 C.
20
20
I C (mA)
I C (mA)
MEA393
MEA395
30
30
4
handbook, halfpage
handbook, halfpage
I
V
E
CE
C c
(pF)
= i
(dB)
Fig.3
Fig.5
2.0
1.6
1.2
0.8
0.4
F
= 5 V; R
e
10
0
5
0
= 0; f = 1 MHz; T
0
0
S
Collector capacitance as a function of
collector-base voltage.
Minimum noise figure as a function of
collector current.
= 50 ; f = 500 MHz; T
4
j
10
= 25 C.
8
j
12
= 25 C.
20
Product specification
V CB (V)
16
I C (mA)
MEA396
MEA397
BFS17
20
30