BFS 17P E6433 Infineon Technologies, BFS 17P E6433 Datasheet
首页 Discrete Semiconductor Products RF Transistors (BJT) BFS 17P E6433
Manufacturer Part Number
BFS 17P E6433
Description
TRANSISTOR RF NPN 15V SOT-23
Manufacturer
Infineon Technologies
Specifications of BFS 17P E6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3.5dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
2.5 MHz
Collector- Emitter Voltage Vceo Max
15 V
Continuous Collector Current
0.025 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFS17PE6433XT SP000011079
NPN Silicon RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17P
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For broadband amplifiers up to 1 GHz at
Pb-free (RoHS compliant) package
Qualified according AEC Q101
collector currents from 1 mA to 20 mA
55 °C
thJA
please refer to Application Note Thermal Resistance
2)
3)
Marking
MCs
1)
1 = B
1
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
CM
CEO
CBO
EBO
tot
j
A
stg
thJS
2 = E
3
3 = C
-65 ... 150
-65 ... 150
Value
Value
280
150
2.5
15
25
25
50
340
Package
SOT23
2007-03-30
BFS17P
1
Unit
V
mA
mW
°C
Unit
K/W
2
Related parts for BFS 17P E6433
BFS 17P E6433 Summary of contents
NPN Silicon RF Transistor For broadband amplifiers GHz at collector currents from Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Maximum Ratings ...
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...
Total power dissipation P 320 mW 240 200 160 120 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 ...
Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17P 2007-03-30 ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
Related keywords
BFS 17P E6433 datasheet BFS 17P E6433 data sheet BFS 17P E6433 pdf datasheet BFS 17P E6433 component BFS 17P E6433 part BFS 17P E6433 distributor BFS 17P E6433 RoHS BFS 17P E6433 datasheet download