BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet - Page 4

• Manufacturer Part Number: BFR93A,235
• Description: TRANS NPN 12V 35MA 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1997 Oct 29
handbook, full pagewidth
handbook, halfpage
NPN 6 GHz wideband transistor
L1 = L3 = 5 H choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
(mW)
P tot
400
300
200
100
0
0
Fig.3 Power derating curve.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
50
100
75 Ω
input
V BB
150
1.5 nF
1 nF
T
L1
s
MBG246
(
o
C)
10 kΩ
200
3.3 pF
270 Ω
L2
4
1 nF
L3
handbook, halfpage
V
DUT
CE
h FE
18 Ω
120
1.5 nF
= 5 V; T
80
40
Fig.4
0
0
0.68 pF
1 nF
j
= 25 C.
DC current gain as a function of
collector current.
MBB251
V CC
output
75 Ω
10
20
Product specification
I
C
(mA)
BFR93A
MCD087
30