BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet - Page 6

• Manufacturer Part Number: BFR93A,235
• Description: TRANS NPN 12V 35MA 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1997 Oct 29
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistor
I
I
gain
(dB)
C
C
(mS)
= 10 mA; V
= 4 mA; V
B S
50
40
20
20
40
40
30
20
10
Fig.11 Circles of constant noise figure;
0
0
Fig.9
10
0
1.6
CE
CE
= 8 V; f = 800 MHz; T
typical values.
= 8 V.
Gain as a function of frequency;
typical values.
MSG
20
2.0
G UM
10
2
2.5
40
amb
3.0
= 25 C.
10
3
60
f (MHz)
F = 3.5 dB
G max
G
S
MBB253
MBB257
(mS)
10
80
4
6
handbook, halfpage
handbook, halfpage
I
I
gain
(dB)
C
(mS)
C
B S
= 30 mA; V
= 4 mA; V
50
30
20
10
10
20
30
40
30
20
10
Fig.10 Gain as a function of frequency;
Fig.12 Circles of constant noise figure;
0
0
10
0
CE
CE
= 8 V; f = 800 MHz; T
typical values.
typical values.
= 8 V.
MSG
2.3
10
20
G UM
2
2.5
3.0
amb
= 25 C.
10
40
3
3.5
Product specification
G max
G
f (MHz)
F = 4.0 dB
S
(mS)
BFR93A
MBB254
MBB258
10
60
4