BFR520,235 NXP Semiconductors, BFR520,235 Datasheet - Page 5
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BFR520,235
Manufacturer Part Number
BFR520,235
Description
TRANS NPN 15V 70MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR520215.pdf
(13 pages)
Specifications of BFR520,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
9397 750 13397
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current;
gain
(dB)
(pF)
C
re
0.6
0.4
0.2
25
20
15
10
5
0
0
I
collector-base voltage.
V
f = 900 MHz.
C
0
0
CE
= 0 A; f = 1 MHz.
= 6 V; f = 900 MHz.
MSG
10
4
20
8
G
UM
V
I
C
CB
(mA)
(V)
G
mra704
mra706
max
Rev. 03 — 1 September 2004
12
30
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current;
(GHz)
gain
(dB)
f
T
12
25
20
15
10
8
4
0
5
0
T
current.
V
f = 2 GHz.
10
0
amb
CE
1
= 6 V; f = 2 GHz.
= 25 C; f = 1 GHz.
10
1
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
G max
G UM
V
CE
10
20
= 6 V
3 V
I
C
I
C
BFR520
(mA)
(mA)
mra705
mra707
10
30
2
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