BFR520,235 NXP Semiconductors, BFR520,235 Datasheet - Page 6
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BFR520,235
Manufacturer Part Number
BFR520,235
Description
TRANS NPN 15V 70MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR520215.pdf
(13 pages)
Specifications of BFR520,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
9397 750 13397
Product data sheet
Fig 7. Gain as a function of frequency; I
Fig 9. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
10
30
20
0
5
4
3
2
1
0
V
V
gain as functions of collector current.
10
1
CE
CE
2000
1000
900
500
= 6 V; I
= 6 V.
MSG
G
UM
F
min
C
= 5 mA.
10
2
10
G
ass
10
f (MHz)
3
I
C
1000
900
2000
(mA)
f (MHz)
G
max
C
mra708
mra714
= 5 mA.
Rev. 03 — 1 September 2004
10
10
4
20
15
10
0
5
2
5
G
(dB)
ass
Fig 8. Gain as a function of frequency; I
Fig 10. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
10
V
V
gain as functions of frequency.
10
CE
CE
2
= 6 V; I
= 6 V.
MSG
G
20
5
UM
F
I
min
C
(mA)
C
= 20 mA.
10
NPN 9 GHz wideband transistor
5
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
20
10
3
G
ass
10
3
f (MHz)
f (MHz)
G
BFR520
max
C
mra709
mra715
= 20 mA.
10
10
4
15
20
10
5
0
4
5
G
(dB)
ass
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