BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet
BFG480W,135
Specifications of BFG480W,135
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BFG480W,135 Summary of contents
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DATA SHEET BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 DISCRETE SEMICONDUCTORS M3D124 1998 Oct 21 ...
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... NXP Semiconductors NPN wideband transistor FEATURES High power gain High efficiency Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance Linear and non-linear operation. APPLICATIONS RF front end with high linearity system demands (CDMA) ...
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... NXP Semiconductors NPN wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T operating junction temperature j Note the temperature at the soldering point of the emitter pins. ...
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... NXP Semiconductors NPN wideband transistor CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage I (BR)CEO V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance re f transition frequency ...
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... NXP Semiconductors NPN wideband transistor 100 handbook, halfpage Fig.3 DC current gain as a function of collector current; typical values. 30 handbook, halfpage f T (GHz GHz amb Fig.5 Transition frequency as a function of collector current; typical values. 1998 Oct 21 MGR624 handbook, halfpage 100 150 I C (mA) ...
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... NXP Semiconductors NPN wideband transistor 20 handbook, halfpage gain (dB GHz. CE Fig.7 Gain as a function of collector current; typical values. 1998 Oct 21 MGR628 handbook, halfpage gain (dB) G max S 21 120 160 I C (mA MSG max mA Fig.8 Gain as a function of frequency; typical values. Product specification BFG480W ...
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... NXP Semiconductors NPN wideband transistor handbook, full pagewidth 180° mA Fig.9 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.10 Common emitter forward transmission coefficient (S 1998 Oct 21 90° 1 135° 0.5 3 GHz 0.2 0.2 0 MHz 0.2 0.5 − ...
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... NXP Semiconductors NPN wideband transistor handbook, full pagewidth 180° mA Fig.11 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA Fig.12 Common emitter output reflection coefficient (S 1998 Oct 21 90° 135° 3 GHz 0.5 0.4 0.3 0.2 0.1 40 MHz − ...
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... NXP Semiconductors NPN wideband transistor Noise data typical values min (MHz) (mA) (dB) 900 2 1.1 0.41 4 1.1 0.31 6 1.2 0.27 8 1.2 0.26 10 1.3 0.28 20 1.6 0.39 40 2.0 0.49 60 2.3 0.57 80 2.9 0.45 2000 2 2.4 0.57 4 2.0 0.49 6 1.8 0.46 8 1.8 0. ...
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... NXP Semiconductors NPN wideband transistor 16 handbook, halfpage G p (dB η Pulsed, class-AB operation; < GHz 2 mA; tuned Fig.14 Power gain and collector efficiency as a function of load power; typical values. 10 handbook, halfpage (Ω 1.8 1. 100 mW Fig.16 Input impedance as function of frequency (series components); typical values. ...
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... NXP Semiconductors NPN wideband transistor handbook, full pagewidth RF input 50 Ω Fig.18 Common emitter test circuit for class-AB operation at 2 GHz. List of components used in test circuit (see Figs 18 and 19) COMPONENT DESCRIPTION C1, C5 multilayer ceramic chip capacitor; note 1 C2, C4 multilayer ceramic chip capacitor; note 1 ...
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... NXP Semiconductors NPN wideband transistor handbook, full pagewidth C1 input Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. ...
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... NXP Semiconductors NPN wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1998 Oct scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...