BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 9

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Noise data
V
APPLICATION INFORMATION
RF performance at T
1998 Oct 21
900
2000
Pulsed; class-AB;  < 1 : 2; t
CE
(MHz)
NPN wideband transistor
f
= 2 V; typical values.
MODE OF OPERATION
2
4
6
8
10
20
40
60
80
2
4
6
8
10
12
14
20
40
60
80
(mA)
I
C
1.1
1.1
1.2
1.2
1.3
1.6
2.0
2.3
2.9
2.4
2.0
1.8
1.8
1.8
1.8
1.8
1.9
2.3
2.6
2.8
(dB)
s
F
 60 C in a common emitter test circuit (see Figs 18 and 19).
min
0.31
0.26
0.49
0.41
0.27
0.28
0.39
0.49
0.57
0.45
0.57
0.46
0.44
0.43
0.44
0.44
0.46
0.52
0.56
0.60
p

= 5 ms
mag
96.1
106.6
118.4
131.7
143.2
166.2
176.0
179.5
177.3
171.9
178.9
175.7
171.7
168.4
165.3
163.7
158.3
150.2
147.7
146.1

angle
(GHz)
2
f
0.21
0.14
0.12
0.10
0.10
0.07
0.07
0.07
0.18
0.09
0.08
0.09
0.09
0.09
0.10
0.10
0.11
0.14
0.18
0.22
()
r
n
V
(V)
3.6
CE
9
handbook, halfpage
V
CE
F min
(dB)
Fig.13 Minimum noise figure as a function of
(mA)
= 2 V.
I
4
3
2
1
0
CQ
1
0
collector current; typical values.
20
(mW)
100
P
2 GHz
L
900 MHz
40
typ. 13.5
(dB)
G
p
Product specification
60
BFG480W
I C (mA)
MGR634
typ. 45
80
(%)

C