BFG92A/X,215 NXP Semiconductors, BFG92A/X,215 Datasheet - Page 3

• Manufacturer Part Number: BFG92A/X,215
• Description: TRANS NPN 15V 25MA 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG92A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6195-2; BFG92A/X,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
V
V
V
I
P
T
T
R
I
h
C
C
C
f
G
F
SYMBOL
SYMBOL
SYMBOL
C
j
CBO
T
FE
stg
j
CBO
CEO
EBO
tot
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 5 GHz wideband transistor
UM
s
s
UM
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to soldering point
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
noise figure
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
I
I
I
I
I
I
I
T
I
T
T
T
E
C
E
C
C
C
C
C
s
amb
amb
s
amb
s
amb
Rev. 06 - 12 March 2008
= 0; V
= i
= 15 mA; V
= i
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
=
60 C; note 1
e
c
c
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
= 0; V
= 0; V
= 0; V
CB
; I
; I
C
C
= 10 V
CONDITIONS
CONDITIONS
= 5 mA; V
= 5 mA; V
EB
CB
CB
12
CE
CE
CE
CE
= 10 V; f = 1 MHz
is zero and
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V
= 10 V; f = 500 MHz 3.5
= 10 V;
= 10 V;
note 1
CONDITIONS
CE
CE
= 10 V;
= 10 V;
G
UM
=
10
log
65
MIN.
65
MIN.
-------------------------------------------------------------- dB.
VALUE
1
290
–
S
90
0.6
0.9
0.35
5
16
11
2
3
TYP.
11
20
15
2
25
400
150
175
Product specification
S
2
MAX.
21
BFG92A/X
1
2
50
135
MAX.
–
S
22
3 of 13
3 of 13
UNIT
K/W
V
V
V
mA
mW
C
C
2
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT