BFG92A/X,215 NXP Semiconductors, BFG92A/X,215 Datasheet - Page 5

• Manufacturer Part Number: BFG92A/X,215
• Description: TRANS NPN 15V 25MA 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG92A/X,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 65
• Dc Current Gain Hfe Max: 135
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6195-2; BFG92A/X,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
gain
(dB)
V
Fig.6
V
Fig.8
gain
(dB)
CE
CE
= 10 V; f = 500 MHz.
= 10 V; I
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
C
= 5 mA.
5
MSG
10
2
G UM
10
15
10
3
G UM
MSG
f
(MHz)
20
G max
I
C
MCD077
MCD079
(mA)
10
25
Rev. 06 - 12 March 2008
4
handbook, halfpage
handbook, halfpage
V
Fig.7
V
Fig.9
gain
(dB)
gain
(dB)
CE
CE
= 10 V; f = 1 GHz.
= 10 V; I
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
C
= 15 mA.
MSG
5
G UM
10
2
10
15
10
G UM
MSG
3
Product specification
G max
BFG92A/X
f (MHz)
20
I
C
MCD078
MCD080
(mA)
5 of 13
5 of 13
10
25
4