BFG520/XR,235 NXP Semiconductors, BFG520/XR,235 Datasheet - Page 6
![TRANS RF NPN 9GHZ 15V SOT143](/photos/16/4/160413/sot143_sml.jpg)
BFG520/XR,235
Manufacturer Part Number
BFG520/XR,235
Description
TRANS RF NPN 9GHZ 15V SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BFG520XR235.pdf
(14 pages)
Specifications of BFG520/XR,235
Package / Case
SC-61AA, SOT143R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
In Figs 7 to 10, G
MSG = maximum stable gain; G
gain.
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
= 5 mA; V
gain
(dB)
gain
(dB)
= 6 V; f = 900 MHz; T
Fig.7 Gain as a function of collector current.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
G UM
MSG
MSG
= 6 V; T
UM
= maximum unilateral power gain;
amb
10
10
amb
2
= 25 C.
= 25 C.
max
10
20
= maximum available
3
I C (mA)
f (MHz)
G max
G max
G UM
MRA674
MRA676
Rev. 04 - 23 November 2007
10
30
4
handbook, halfpage
handbook, halfpage
V
I
C
CE
BFG520; BFG520/X; BFG520/XR
= 20 mA; V
gain
(dB)
gain
(dB)
Fig.8 Gain as a function of collector current.
= 6 V; f = 2 GHz; T
25
20
15
10
50
40
30
20
10
5
0
0
10
Fig.10 Gain as a function of frequency.
0
MSG
CE
= 6 V; T
amb
10
10
amb
2
G UM
MSG
= 25 C.
= 25 C.
G max
G UM
10
20
3
Product specification
I C (mA)
f (MHz)
G max
MRA675
MRA677
6 of 14
10
30
4