BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet
BFQ67W,135
Specifications of BFQ67W,135
Related parts for BFQ67W,135
BFQ67W,135 Summary of contents
Page 1
DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...
Page 2
... NXP Semiconductors NPN 8 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope designed for wideband applications such as satellite TV ...
Page 3
... NXP Semiconductors NPN 8 GHz wideband transistor THERMAL RESISTANCE SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C, unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain ...
Page 4
... NXP Semiconductors NPN 8 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating curve. 0.8 handbook, halfpage C re (pF) 0.6 0.4 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. September 1995 MRC045- 1 handbook, halfpage h FE 150 200 Fig.3 ...
Page 5
... NXP Semiconductors NPN 8 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 20 handbook, halfpage gain (dB GHz amb Fig.6 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG −2 − mA amb Fig.8 Gain as a function of frequency. ...
Page 6
... NXP Semiconductors NPN 8 GHz wideband transistor 4 handbook, halfpage F (dB GHz. CE Fig.10 Minimum noise figure as a function of collector current. handbook, full pagewidth 180° mA GHz September 1995 MRC044 (mA) 90° 1 135° 0.5 F min = 1.5 dB 0.2 opt 0 0.2 0.5 − ...
Page 7
... NXP Semiconductors NPN 8 GHz wideband transistor handbook, full pagewidth 180° mA Fig.12 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.13 Common emitter forward transmission coefficient (S September 1995 90° 1 135° 0.5 0.2 3 GHz 0.2 0 0.2 0.5 −135° ...
Page 8
... NXP Semiconductors NPN 8 GHz wideband transistor handbook, full pagewidth 180° mA Fig.14 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA Fig.15 Common emitter output reflection coefficient (S September 1995 90° 135° 3 GHz 40 MHz 0.5 0.4 0.3 0.2 0.1 − ...
Page 9
... NXP Semiconductors NPN 8 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 September 1995 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
Page 10
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
Page 11
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 12
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...