BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet - Page 8

• Manufacturer Part Number: BFQ67W,135
• Description: TRANS NPN 10V 20MA 8GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
I
C
C
= 15 mA; V
= 15 mA; V
CE
CE
= 8 V.
= 8 V; Z
o
= 50 .
Fig.14 Common emitter reverse transmission coefficient (S
180°
180°
Fig.15 Common emitter output reflection coefficient (S
0.5
0
−135°
−135°
135°
135°
0.4
0.2
0.2
0.2
0.3
0.5
0.5
0.2
0.5
0.1
−90°
−90°
90°
90°
3 GHz
8
1
1
1
40 MHz
3 GHz
2
2
2
5
MRC049
−45°
40 MHz
−45°
45°
45°
MRC050
5
5
22
0°
0°
).
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFQ67W