BFU710F,115 NXP Semiconductors, BFU710F,115 Datasheet - Page 65

• Manufacturer Part Number: BFU710F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU710F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 43GHz
• Noise Figure (db Typ @ F): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 2V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

3.2.3 Band-switch diodes
Why choose NXP Semiconductors’ bandswitch diodes:
` Reliable volume supplier
` Short leadtimes
` Low series Inductance
` Low Insertion loss
` Low capacitance
` High reverse Isolation
Bold = Highly recommended product
3.2.4 Schottky diodes
Why choose NXP Semiconductors’ schottky diodes
` (Very) low diode capacitance
` (Very) low forward voltage
` Single and triple-isolated diode
` (Ultra / very) small package
Applications
` Digital applications:
` RF applications:
Low-capacitance Schottky diodes
^ Diodes have matched capacitance
Type
BAT17
PMBD353
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
Type
BA277
BA591
BA891
BAT18
NEW : Schottky diode selection guide on www.nxp.com/rfschottkydiodes
- ultra high-speed switching
- clamping circuits
- diode ring mixer
- RF detector
- RF voltage doubler
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
Package
SOD523
SOD323
SOD523
SOT23
Package
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
V
Configuration
triple isolated
triple isolated
triple isolated
R
dual series
dual series
dual series
(V)
35
35
35
35
max
dual c.a.
dual c.c
single
single
single
single
single
IF max
(mA)
100
100
100
100
V
R
(V)
max.
15
15
15
15
15
15
15
4
4
4
4
4
4
r
D
(Ω)
0.7
0.7
0.7
0.7
max
@ IF =
(mA)
2
3
3
5
I
F
(mA)
max.
30
30
30
30
30
30
30
30
30
30
30
30
30
(MHz)
@ f =
100
100
100
200
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
V
F
(mV)
max.
C
d
(pF)
1.2
0.9
0.9
max
1
@ V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
NXP Semiconductors RF Manual 14
(V)
20
C
6
3
3
R
D
(pF)
=
max.
(MHz)
@ f =
1
1
1
1
th
edition
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