BFU710F NXP Semiconductors, BFU710F Datasheet
BFU710F
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BFU710F Summary of contents
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... BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF ...
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... K > < 1 then G p(max) Discrete pinning Description emitter base emitter collector Ordering information Package Name Description - plastic surface-mounted flat pack package; reverse pinning; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F Min Typ - - - - - - - 2 [ 200 375 ...
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... Parameter thermal resistance from junction to solder point 200 P tot (mW) 150 100 Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Min Max - 10 - 2 ≤ 90 °C ...
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... GHz GHz = 2 V; Γ = Γ mA °C T amb f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz GHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F Min Typ Max Unit 2 100 nA 200 375 ...
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... V ( Fig 3. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F Min Typ Max Unit = 25 ° ° ...
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... Transition frequency as a function of collector current; typical values 35 MSG G (dB p(max All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F 001aam846 (mA ° GHz amb 001aam847 (1) (2) (3) (4) (5) ...
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... Fig 8. 001aam850 2.0 NF min (dB) 1.5 1.0 0 (mA) C Fig 10. Minimum noise figure as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F 001aam849 MSG IS21I p(max) MSG (GHz °C. ...
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... 2.2 1.35 2.2 0.48 1.3 1.15 1.8 1.15 2.0 0.38 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 r BFU710F NPN wideband silicon germanium RF transistor detail 0.2 0.1 EUROPEAN PROJECTION © NXP B.V. 2011. All rights reserved. SOT343F X ISSUE DATE 05-07-12 ...
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... GPS LNA Ka LNB NPN RF RKE 10. Revision history Table 9. Revision history Document ID Release date BFU710F v.1 20110420 BFU710F Product data sheet NPN wideband silicon germanium RF transistor Abbreviations Description Automatic Meter Reading Direct Broadcast Satellite Direct Current Dielectric Resonator Oscillator Frequency Modulation Global Positioning System ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F © NXP B.V. 2011. All rights reserved Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 April 2011 BFU710F © NXP B.V. 2011. All rights reserved Datasheet pdf - http://www.DataSheet4U.net/ ...
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... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BFU710F All rights reserved. Date of release: 20 April 2011 Datasheet pdf - http://www.DataSheet4U.net/ ...