BFG520/X,235 NXP Semiconductors, BFG520/X,235 Datasheet - Page 3

• Manufacturer Part Number: BFG520/X,235
• Description: TRANS RF NPN 9GHZ 15V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
V
V
V
I
P
T
T
R
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 9 GHz wideband transistor
SYMBOL
s
SYMBOL
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
PARAMETER
PARAMETER
Rev. 04 - 23 November 2007
open emitter
open base
open collector
up to T
s
up to T
= 88 C; note 1
CONDITIONS
BFG520; BFG520/X; BFG520/XR
CONDITIONS
s
= 88 C; note 1
65
MIN.
THERMAL RESISTANCE
20
15
2.5
70
300
150
175
Product specification
290 K/W
MAX.
3 of 14
V
V
V
mA
mW
C
C
UNIT