BC846S,125 NXP Semiconductors, BC846S,125 Datasheet - Page 5

• Manufacturer Part Number: BC846S,125
• Description: TRANSISTOR NPN 65V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC846S,125

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 200 mW
• Dc Collector/base Gain Hfe Min: 110
• Gain Bandwidth Product Ft: 100 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details
• Other names: 568-6061-2; BC846S,125

NXP Semiconductors
PACKAGE OUTLINE
1999 Sep 01
Plastic surface mounted package; 6 leads
NPN general purpose double transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
1
6
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
5
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
A
y
c
Product data sheet
X
v
ISSUE DATE
BC846S
M
97-02-28
A
SOT363