BC846S,115 NXP Semiconductors, BC846S,115 Datasheet

TRANSISTOR NPN 65V 100MA SOT363

BC846S,115

Manufacturer Part Number
BC846S,115
Description
TRANSISTOR NPN 65V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC846S,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055429115
BC846S T/R
BC846S T/R
Product data sheet
Supersedes data of 1999 May 28
DATA SHEET
handbook, halfpage
BC846S
NPN general purpose double
transistor
DISCRETE SEMICONDUCTORS
MBD128
1999 Sep 01

Related parts for BC846S,115

BC846S,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage BC846S NPN general purpose double transistor Product data sheet Supersedes data of 1999 May 28 DISCRETE SEMICONDUCTORS MBD128 1999 Sep 01 ...

Page 2

... NXP Semiconductors NPN general purpose double transistor FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors. APPLICATIONS • General purpose switching and small signal amplification. DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package ...

Page 3

... NXP Semiconductors NPN general purpose double transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor I collector cut-off current CBO I emitter cut-off current ...

Page 4

... NXP Semiconductors NPN general purpose double transistor 3 10 handbook, halfpage V CEsat (mV (1) (2) (3) 10 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 Collector-emitter saturation voltage as a function of collector current; typical values. 400 handbook, full pagewidth h FE 300 ...

Page 5

... NXP Semiconductors NPN general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 1999 Sep scale 2.2 1.35 2.2 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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