NX3L1T53GD,125 NXP Semiconductors, NX3L1T53GD,125 Datasheet - Page 7

• Manufacturer Part Number: NX3L1T53GD,125
• Description: IC ANALOG SWITCH SPDT XSON8U
• Manufacturer: NXP Semiconductors

Specifications of NX3L1T53GD,125

• Number Of Switches: 1
• Switch Configuration: SPDT
• On Resistance (max): 1.6 Ohms
• On Time (max): 120 ns
• Off Time (max): 90 ns
• Off Isolation (typ): - 90 dB
• Supply Voltage (max): 4.3 V
• Supply Voltage (min): 1.4 V
• Supply Current: 690 nA, 800 nA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: XSON-8U
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): +/- 500 nA
• Operating Frequency: 60 MHz
• Power Dissipation: 250 mW
• Switch Current (typ): +/- 350 mA, +/- 500 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5545-2

NXP Semiconductors
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see
NX3L1T53_4
Product data sheet
Symbol
R
Fig 6.
Fig 7.
ON(peak)
V
V
Test circuit for measuring OFF-state leakage current
Test circuit for measuring ON-state leakage current
Parameter
ON resistance (peak)
I
I
ON resistance
= 0.3 V or V
= 0.3 V or V
11.1 Test circuits
11.2 ON resistance
V
IL
CC
CC
or V
− 0.3 V; V
− 0.3 V; V
V
V
IH
IH
IL
or V
V
IH
V I
IL
O
O
= V
= open circuit.
Conditions
V
I
see
SW
I
CC
V I
V
V
V
V
V
= GND to V
CC
CC
CC
CC
CC
= 100 mA;
Figure 8
− 0.3 V or 0.3 V.
I
S
= 1.4 V
= 1.65 V
= 2.3 V
= 2.7 V
= 4.3 V
S
Z
E
Rev. 04 — 24 March 2010
V
CC
CC
S
Z
GND
;
Y0
Y1
E
V
CC
1
2
GND
Y0
Y1
Low-ohmic single-pole double-throw analog switch
switch
1
2
switch
Min
I
-
-
-
-
-
S
−40 °C to +85 °C
V O
switch
Typ
0.55
1.6
1.0
0.5
0.5
1
2
V O
[1]
switch
V
V
1
2
S
IH
IL
001aad391
Max
0.75
0.75
001aad390
3.7
1.6
0.8
V
V
V
V
S
E
IH
IL
IL
IL
−40 °C to +125 °C Unit
V
V
Min
E
IH
IH
-
-
-
-
-
NX3L1T53
Figure 9
© NXP B.V. 2010. All rights reserved.
Max
4.1
1.7
0.9
0.9
0.9
to
Figure
Ω
Ω
Ω
Ω
Ω
7 of 24
15.