W25Q64CVSSIG Winbond Electronics, W25Q64CVSSIG Datasheet - Page 33

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W25Q64CVSSIG

Manufacturer Part Number
W25Q64CVSSIG
Description
IC SPI FLASH 64MBIT 8-SOIC
Manufacturer
Winbond Electronics
Datasheet

Specifications of W25Q64CVSSIG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (0.083", 2.10mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q5822008

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W25Q64CVSSIG
Manufacturer:
WINBOND/华邦
Quantity:
20 000
Company:
Part Number:
W25Q64CVSSIG
Quantity:
15
W25Q64CV
Figure 14b. Fast Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to EBh. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 11.2.18 for detail descriptions.
Publication Release Date: January 4, 2010
- 33 -
Preliminary - Revision B

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