TISP5115H3BJR-S Bourns Inc., TISP5115H3BJR-S Datasheet - Page 2

• Manufacturer Part Number: TISP5115H3BJR-S
• Description: Sidacs Forward Conducting Unidirectional
• Manufacturer: Bourns Inc.

Specifications of TISP5115H3BJR-S

• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 90 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Repetitive peak off-state voltage (see Note 1)
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
Initial rate of rise of on-state current, GR-1089-CORE 2/10 µs wave shape
Junction temperature
Storage temperature range
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
V
V
I
Absolute Maximum Ratings, T A = 25
Electrical Characteristics, T A = 25
DRM
(BO)
(BO)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage waveshape)
0.2/310 µs (I3124, 0.5/700 µs waveshape)
5/310 µs (ITU-T K.44, 10/700 µs voltage waveshape used in K.20/21/45)
5/310 µs (FTZ R12, 10/700 µs voltage waveshape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s 50 Hz/60 Hz a.c.
TISP5xxxH3BJ Overvoltage Protection Series
2. Initially the device must be in thermal equilibrium with T
3. The surge may be repeated after the device returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
Repetitive peak off-state current
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other
durations.
Impulse breakover voltage
Breakover voltage
Parameter
°
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted)
V
dv/dt = -250 V/ms, R
dv/dt ≥ -1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
D
= V
Rating
DRM
J
SOURCE
= 25 °C.
Test Conditions
= 300 Ω
Customers should verify actual device performance in their specific applications.
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
Specifications are subject to change without notice.
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
T
T
A
A
JANUARY 1998 - REVISED JANUARY 2007
= 25 °C
= 85 °C
Symbol
V
I
di
PPSM
I
T
TSM
DRM
T
T
stg
/dt
J
Min Typ Max Unit
-40 to +150
-65 to +150
Value
±500
±300
±250
±220
±200
±200
±200
±160
±100
±400
-120
-160
-58
-65
-75
-80
-90
2.1
55
60
-110
-115
-150
-190
-105
-120
-125
-160
-200
-10
-70
-80
-95
-80
-90
-5
A/µs
Unit
µA
V
V
°C
°C
V
A
A