TISP5115H3BJR-S Bourns Inc., TISP5115H3BJR-S Datasheet - Page 3

• Manufacturer Part Number: TISP5115H3BJR-S
• Description: Sidacs Forward Conducting Unidirectional
• Manufacturer: Bourns Inc.

Specifications of TISP5115H3BJR-S

• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 90 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Electrical Characteristics, T A = 25
NOTE:
Thermal Characteristics, T A = 25
NOTE:
V
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85V
I
R
(BO)
C
V
FRM
V
I
I
H
D
θJA
O
F
T
TISP5xxxH3BJ Overvoltage Protection Series
6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly
7. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Peak forward recovery voltage
Junction to ambient thermal resistance
dependent on connection inductance.
Off-state capacitance
Parameter
Breakover current
On-state voltage
Off-state current
Forward voltage
Holding current
(see Note 6)
Parameter
°
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted) (Continued)
dv/dt = -250 V/ms, R
I
dv/dt ≤ +1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
I
I
V
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
f = 1 MHz, V
F
T
T
D
= 5 A, t
= -5 A, t
= -5 A, di/dt = +30 mA/ms
= -50 V
W
EIA/JESD51-3 PCB, I
(see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
w
= 500 µs
= 500 µs
d
d
d
d
= 1 V rms, V
= 1 V rms, V
= 1 V rms, V
= 1 V rms, V
SOURCE
T
= I
D
D
D
D
Test Conditions
TSM(1000)
= -1 V
= -2 V
= -50 V
= -100 V
= 300 Ω
Test Conditions
T
= I
TSM(1000)
DRM
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5150H3BJ
'5190H3BJ
T
A
= 85 °C
Min
-150
-150
Min Typ Max Unit
-5
Typ
50
300
280
260
240
214
140
140
260
245
225
205
180
120
120
90
80
73
65
56
35
35
30
30
Max
113
-600
-600
420
390
365
335
300
195
195
365
345
315
285
250
170
170
125
110
100
-10
90
80
50
50
40
30
-3
3
5
°C/W
kV/µs
Unit
mA
mA
µA
pF
V
V
V