TISP5115H3BJR-S Bourns Inc., TISP5115H3BJR-S Datasheet - Page 7

• Manufacturer Part Number: TISP5115H3BJR-S
• Description: Sidacs Forward Conducting Unidirectional
• Manufacturer: Bourns Inc.

Specifications of TISP5115H3BJR-S

• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 90 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Rating And Thermal Information
TISP5xxxH3BJ Overvoltage Protection Series
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
-40
-35
T
AMIN
-30
MINIMUM AMBIENT TEMPERATURE
- Minimum Ambient Temperature - °C
-25
V
DRM
-20
Figure 9.
DERATING FACTOR
-15
-10
vs
-5
1.5
30
20
15
10
9
8
7
6
5
4
3
2
0·1
0
NON-REPETITIVE PEAK ON-STATE CURRENT
5
10
15
1
TI5XAD
20
CURRENT DURATION
t - Current Duration - s
V
R
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
25
A
GEN
GEN
Figure 8.
= 25 °C
= 600 Vrms, 50/60 Hz
= 1.4*V
vs
10
GEN
/I
TSM(t)
700
600
500
400
300
250
200
150
120
100
90
80
100
-40 -30 -20 -10 0
TI5HAC
1000
T
A
BELLCORE 2/10
AMBIENT TEMPERATURE
- Ambient Temperature - °C
Figure 10.
IMPULSE RATING
10 20 30 40 50 60 70 80
vs
BELLCORE 10/1000
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
FCC 10/160
TC5XAA