F25L004A-50PAIG ELITE SEMICONDUCTOR, F25L004A-50PAIG Datasheet - Page 11

• Manufacturer Part Number: F25L004A-50PAIG
• Description: IC, FLASH, 4MBIT, 50MHZ, SOIC-8
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of F25L004A-50PAIG

• Memory Type: Flash
• Memory Size: 4Mbit
• Memory Configuration: 512 X 8
• Ic Interface Type: Serial, SPI
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Fast-Read (50 MHz ; 100 MHz)
The High-Speed-Read instruction supporting up to 100 MHz is
initiated by executing an 8-bit command, 0BH, followed by
address bits [A
low for the duration of the High-Speed-Read cycle. See Figure 3
for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from the
specified address location. The data output stream is continuous
Elite Semiconductor Memory Technology Inc.
Figure 3 : HIGH-SPEED-READ SEQUENCE
SCK
SO
CE
SI
MODE0
MODE3
23
-A
Note : X = Dummy Byte : 8 Clocks Input Dummy (V
0
] and a dummy byte. CE must remain active
MSB
0 1 2 3 4 5 6 7 8
0B
HIGH IMPENANCE
MSB
ADD.
15 16
ADD.
IL
23 24
or V
IH
ADD.
)
through all addresses until terminated by a low to high transition
on CE . The internal address pointer will automatically increment
until the highest memory address is reached. Once the highest
memory
automatically increment to the beginning (wrap-around) of the
address space, i.e. for 4Mbit density, once the data from address
location 7FFFFH has been read, the next output will be from
address location 000000H.
31 32
X
MSB
39 40
Operation Temperature condition -40
address
D
N
OUT
47 48
is
N+1
D
OUT
Publication Date: Oct. 2007
reached,
55 56
Revision:
N+2
D
OUT
the
63 64
D
N+3
address
OUT
F25L004A
1.1
71 72
D
N+4
OUT
pointer
11/32
°
C
80
~85
will
°
C