F25L004A-50PAIG ELITE SEMICONDUCTOR, F25L004A-50PAIG Datasheet - Page 9

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F25L004A-50PAIG

Manufacturer Part Number
F25L004A-50PAIG
Description
IC, FLASH, 4MBIT, 50MHZ, SOIC-8
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of F25L004A-50PAIG

Memory Type
Flash
Memory Size
4Mbit
Memory Configuration
512 X 8
Ic Interface Type
Serial, SPI
Clock Frequency
50MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ESMT
Instructions
Instructions are used to Read, Write (Erase and Program), and
configure the F25L004A. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Byte-Program, Auto Address Increment (AAI)
programming,
instructions, the Write-Enable (WREN) instruction must be
executed first. The complete list of the instructions is provided in
Table 5. All instructions are synchronized off a high to low
transition of CE . Inputs will be accepted on the rising edge of
TABLE 5: DEVICE OPERATION INSTRUCTIONS
1.
2.
3.
4.
5.
6.
7.
8.
9.
Elite Semiconductor Memory Technology Inc.
Read
High-Speed-Read
Sector-Erase
Block-Erase (64K Byte)
Chip-Erase
Byte-Program
Auto-Address-Increment-word
programming (AAI)
Read-Status-Register
(RDSR)
Enable-Write-Status-Register
(EWSR)
Write-Status-Register
(WRSR)
Write-Enable (WREN)
Write-Disable (WRDI)
Read-Electronic-Signature
(RES)
Jedec-Read-ID (JEDEC-ID)
Read-ID (RDID)
Enable SO to output RY/BY#
Status during AAI (EBSY)
Disable SO to output RY/BY#
Status during AAI (DBSY)
Operation: S
X = Dummy Input Cycles (V
One bus cycle is eight clock periods.
Sector addresses: use AMS-A12, remaining addresses can be V
Prior to any Byte-Program, Sector-Erase, Block-Erase,or Chip-Erase operation, the Write-Enable (WREN) instruction must be
executed.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by the data to be
programmed.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
Operation
8
8
Cycle Type/
6
4,5
5
Sector-Erase,
IN
(4K Byte)
= Serial In, S
1,2
11
10
OUT
IL
Block-Erase,
or V
100
33
50
Freq
= Serial Out
Max
MHz
MHz
MHz
IH
); - = Non-Applicable Cycles (Cycles are not necessary)
90H
90H
ADH
0BH
D8H
C7H
ABH
03H
20H
60H
02H
05H
50H
01H
06H
04H
9FH
70H
80H
S
IN
(A0=0)
(A0=1)
or
1
S
Hi-Z A
Hi-Z
Hi-Z A
Hi-Z
Hi-Z
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Chip-Erase
OUT
Data
23
23
23
23
23
23
23
S
X
X
X
-A
-A
-A
-A
-
-A
-A
-A
-
-
-
-
-
IN
16
16
16
16
16
16
16
2
S
D
8CH
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z A
Hi-Z
12H
Hi-Z A
IL
OUT
OUT
SCK starting with the most significant bit. CE must be driven
low before an instruction is entered and must be driven high after
the last bit of the instruction has been shifted in (except for Read,
Read-ID and Read-Status-Register instructions). Any low to high
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first
-
-
-
-
-
-
or V
IH
15
15
15
15
15
15
15
S
X
-
-
-
-
-
-
-
-
-
IN
-A
-A
-A
-A
-A
-A
-A
8
8
8
8
8
8
8
Operation Temperature condition -40
Bus Cycle
21H(Bottom)
20H(Top)
3
Note
S
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
OUT
-
-
-
-
-
-
-
-
7
Publication Date: Oct. 2007
A
A
A
A
A
A
A
S
7
7
7
7
7
7
7
-.
X
-A
-A
-A
-A
-
-A
-A
-
-
-
-
-
-A
-
-
IN
0
0
0
0
0
0
0
4
Revision:
Note
S
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z D
Hi-Z D
Hi-Z
13H
OUT
-
-
-
-
-
-
-
-
7
S
X
X
X
IN
-
-
-
-
-
-
-
-
-
-
-
-
IN
IN
0 Hi-Z D
F25L004A
5
Note
S
D
8CH
1.1
Hi-Z
12H
OUT
OUT
X
-
-
-
-
-
-
-
-
-
-
-
7
S
X
X
IN
-
-
-
-
-
-
-
-
-
-
-
IN
1 Hi-Z
9/32
°
6
C
S
D
8CH
12H
OUT
OUT
~85
-
-
-
-
-
-
-
-
-
-
-
°
C

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