F25L004A-50PAIG ELITE SEMICONDUCTOR, F25L004A-50PAIG Datasheet - Page 15

• Manufacturer Part Number: F25L004A-50PAIG
• Description: IC, FLASH, 4MBIT, 50MHZ, SOIC-8
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of F25L004A-50PAIG

• Memory Type: Flash
• Memory Size: 4Mbit
• Memory Configuration: 512 X 8
• Ic Interface Type: Serial, SPI
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
64K-Byte Block-Erase
The 64K Byte Block-Erase instruction clears all bits in the
selected block to FFH. A Block-Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block-Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits
FIGURE 9 : 64-KBYTE BLOCK-ERASE SEQUENCE
Elite Semiconductor Memory Technology Inc.
[A
are used to determine the block address (BA
address bits can be VIL or VIH. CE must be driven high before
the instruction is executed. The user may poll the Busy bit in the
software status register or wait TBE for the completion of the
internal self-timed Block-Erase cycle. See Figure 9 for the
Block-Erase sequence.
23
-A
0
]. Address bits [A
Operation Temperature condition -40
MS
Publication Date: Oct. 2007
-A
16
] (A
Revision:
MS
= Most Significant address)
F25L004A
1.1
X
), remaining
15/32
°
C
~85
°
C