AM29F800BB-55SF Spansion Inc., AM29F800BB-55SF Datasheet - Page 39
![IC, FLASH, 8MBIT, 55NS, SOIC-44](/photos/19/5/190559/4243291_sml.jpg)
AM29F800BB-55SF
Manufacturer Part Number
AM29F800BB-55SF
Description
IC, FLASH, 8MBIT, 55NS, SOIC-44
Manufacturer
Spansion Inc.
Datasheet
1.AM29F800BB-55SF.pdf
(45 pages)
Specifications of AM29F800BB-55SF
Memory Type
Flash
Memory Size
8Mbit
Memory Configuration
1M X 8 / 512K X 16
Access Time
55ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
44
Cell Type
NOR
Density
8Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20/19Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
SO
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
50mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AM29F800BB-55SF
Manufacturer:
AMD
Quantity:
1 200
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
August 3, 2009 21504E7
Parameter
Sector Erase Time
Chip Erase Time (Note 2)
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 2)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
. Test conditions: V
Description
Word Mode
Byte Mode
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
CC
Typ (Note 1)
= 4.5 V, 1,000,000 cycles.
CC
1.0
7.2
6.3
19
12
7
= 5.0 V, one pin at a time.
D A T A S H E E T
Am29F800B
Max (Note 3)
21.6
18.6
300
500
8
Test Conditions
°
C, 5.0 V V
150°C
125°C
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
Unit
µs
µs
s
s
s
s
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
8.5
7.5
6
Comments
V
CC
+100 mA
12.5 V
Max
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF
37