IS61NLP25636A-200TQLI INTEGRATED SILICON SOLUTION (ISSI), IS61NLP25636A-200TQLI Datasheet - Page 9

• Manufacturer Part Number: IS61NLP25636A-200TQLI
• Description: IC, SRAM, 9MBIT, 3.1NS, TQFP-100
• Manufacturer: INTEGRATED SILICON SOLUTION (ISSI)

Specifications of IS61NLP25636A-200TQLI

• Memory Size: 9Mbit
• Memory Configuration: 256K X 8
• Clock Frequency: 200MHz
• Access Time: 3.1ns
• Supply Voltage Range: 3.135V To 3.465V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
STATE DIAGRAM
SYNCHRONOUS TRUTH TABLE
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by ↑
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WE = L means Write operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. G
07/28/2010
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
WE = H means Read operation in Write Truth Table.
READ
BURST
READ
BURST
READ
External Address
External Address
External Address
BEGIN
BURST
Current Address
READ
Next Address
Next Address
Next Address
Next Address
Address
Used
N/A
N/A
N/A
N/A
N/A
(1)
WRITE
DS
DS
READ
DS
CE
H
X
X
X
X
X
X
X
X
L
L
L
L
DESELECT
1-800-379-4774
WRITE
READ
CE2
X
X
X
H
X
H
X
H
X
H
X
X
L
CE2
X
X
H
X
X
X
X
X
X
L
L
L
L
WRITE
BURST
DS
ADV
DS
H
H
H
H
H
X
L
L
L
L
L
L
L
READ
WE
X
X
X
X
H
X
H
X
X
X
X
L
L
BURST
BEGIN
WRITE
BURST
WRITE
BWx
H
H
X
X
X
X
X
X
X
X
X
L
L
WRITE
OE
H
H
X
X
X
X
X
X
X
X
X
L
L
BURST
WRITE
CKE
H
L
L
L
L
L
L
L
L
L
L
L
L
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
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