BS62LV256SCG70 BSI (BRILLIANCE SEMICONDUCTOR), BS62LV256SCG70 Datasheet

BS62LV256SCG70

Manufacturer Part Number

BS62LV256SCG70

Description

SRAM, 32KX8, 3-5V, COMM, 70NS, 28SOP

Manufacturer

BSI (BRILLIANCE SEMICONDUCTOR)

Datasheet

1.BS62LV256SCG70.pdf (10 pages)

Specifications of BS62LV256SCG70

Memory Size

256Kbit

Clock Frequency

10MHz

Access Time

70ns

Supply Voltage Range

2.4V To 5.5V

Memory Case Style

SOP

No. Of Pins

Operating Temperature Range

0Â°C To +70Â°C

Memory Configuration

32K X 8

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS62LV256SCG70

Manufacturer:

BSI

Quantity:

5 530

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS62LV256SCG70

Manufacturer:

BSI

Quantity:

5 530

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Download datasheet (307Kb)

R0201-BS62LV256

Wide V

Very low power consumption :

High speed access time :

Automatic power down when chip is deselected

Easy expansion with CE and OE options

Three state outputs and TTL compatible

Fully static operation

Data retention supply voltage as low as 1.5V

FEATURES

POWER CONSUMPTION

BS62LV256DC

BS62LV256PC

BS62LV256SC

BS62LV256TC

BS62LV256PI

BS62LV256SI

BS62LV256TI

PIN CONFIGURATIONS

Brilliance Semiconductor, Inc.

-55

-70

PRODUCT

FAMILY

= 3.0V

= 5.0V

operation voltage : 2.4V ~ 5.5V

VCC

A13

A14

A12

A11

GND

DQ0

DQ1

DQ2

A14

A12

Operation current : 25mA (Max.) at 70ns

Standby current :

Operation current : 40mA (Max.) at 55ns

Standby current :

55ns(Max.) at V

70ns(Max.) at V

TEMPERATURE

-40

OPERATING

•

BS62LV256TC

BS62LV256TI

Commercial

BS62LV256PC

BS62LV256PI

BS62LV256SC

BS62LV256SI

Industrial

C to +70

C to +85

Pb-Free and Green package materials are compliant to RoHS

Very Low Power CMOS SRAM

32K X 8 bit

: 4.5~5.5V

: 3.0~5.5V

0.4/0.7uA(Max.) at 70

4/5uA (Max.) at 70

1mA (Max.) at 1MHz

2mA (Max.) at 1MHz

VCC

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

4.0uA

5.0uA

=5.0V V

STANDBY

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

CCSB1

, Max)

reserves the right to change products and specifications without notice.

0.4uA

0.7uA

C/85

=3.0V

C/85

1.5mA

1MHz

2mA

POWER DISSIPATION

The BS62LV256 is a high performance, very low power CMOS Static

Random Access Memory organized as 32,768 by 8 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum CMOS standby

current of 0.7uA/5uA at 3V/5V at 85

55/70ns.

Easy memory expansion is provided by an active LOW chip enable

(CE), and active LOW output enable (OE) and three-state output

drivers.

The BS62LV256 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV256 is available in DICE form, JEDEC standard 28 pin

330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP

(normal type).

10MHz

18mA

20mA

DESCRIPTION

=5.0V

BLOCK DIAGRAM

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

A12

A14

A13

A11

GND

35mA

40mA

Max.

Address

Operating

Buffer

Input

Control

, Max)

0.8mA

1MHz

1mA

Output

Buffer

Input

Data

Decoder

Row

10MHz

12mA

15mA

=3.0V

C and maximum access time of

BS62LV256

512

20mA

25mA

Max.

Address Input Buffer

Column Decoder

A3 A2 A1 A0 A10

Memory Array

Write Driver

Column I/O

Sense Amp

Revision

Oct.

512X512

DICE

PDIP-28

SOP-28

TSOP-28

PDIP-28

SOP-28

TSOP-28

PKG TYPE

512

2008

2.7

Related parts for BS62LV256SCG70

BS62LV256SCG70 Summary of contents

Page 1

Very Low Power CMOS SRAM 32K X 8 bit Pb-Free and Green package materials are compliant to RoHS FEATURES Wide V operation voltage : 2.4V ~ 5.5V CC Very low power consumption : V = 3.0V Operation current : 25mA ...

Page 2

PIN DESCRIPTIONS Name A0-A14 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports V CC GND TRUTH TABLE MODE CE Not selected H (Power Down) Output Disabled L Read L Write ...

Page 3

DC ELECTRICAL CHARACTERISTICS (T PARAMETER PARAMETER NAME V Power Supply CC V Input Low Voltage IL V Input High Voltage IH I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level CLZ OLZ CHZ OHZ WHZ Output Load Others V ...

Page 5

SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE 1 ADDRESS D OUT (1,3,4) READ CYCLE OUT (1, 4) READ CYCLE 3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously ...

Page 6

AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t AVAX AVWH E1LWH WLWH AVWL WHAX WLQZ WHZ t ...

Page 7

WRITE CYCLE 2 ADDRESS OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals ...

Page 8

ORDERING INFORMATION BS62LV256 Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the ...

Page 9

PACKAGE DIMENSIONS (continued TSOP - 28 PDIP - 28 R0201-BS62LV256 12°(2x) 12°(2x Seating Plane 12°(2x) 15 ° "A" SEATING PLANE 15 12°(2x) ...

Page 10

Revision History Revision No. History 2.4 Add Icc1 characteristic parameter 2.5 Change I-grade operation temperature range - from –25 O 2.6 Revised I CCSB1 - from 1.0uA to 4.0uA for 5V C-grade - from 2.0uA to 5.0uA for 5V I-grade ...

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