BD616LV4017AC-70 BSI [Brilliance Semiconductor], BD616LV4017AC-70 Datasheet

BD616LV4017AC-70

Manufacturer Part Number

BD616LV4017AC-70

Description

Very Low Power/Voltage CMOS SRAM 256K X 16 bit

Manufacturer

BSI [Brilliance Semiconductor]

Datasheet

1.BD616LV4017AC-70.pdf (10 pages)

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R0201-BS616LV4017

• Wide Vcc operation voltage : 2.4~5.5V

• Very low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

Brilliance Semiconductor, Inc

FEATURES

BS616LV4017AC

BS616LV4017DI

BS616LV4017EI

BS616LV4017AI

BS616LV4017DC

BS616LV4017EC

PRODUCT FAMILY

Vcc = 3.0V C-grade: 26mA (@55ns) operating current

Vcc = 5.0V C-grade: 63mA (@55ns) operating current

-55

-70

PIN CONFIGURATIONS

PRODUCT FAMILY

GND

DQ0

DQ1

DQ2

DQ3

VCC

DQ4

DQ5

DQ6

DQ7

A17

A16

A15

A14

A13

BSI

55ns

70ns

BS616LV4017EC

BS616LV4017EI

C-grade: 21mA (@70ns) operating current

0.45uA (Typ.) CMOS standby current

2.0uA (Typ.) CMOS standby current

C-grade: 53mA (@70ns) operating current

I-grade: 27mA (@55ns) operating current

I-grade: 22mA (@70ns) operating current

I-grade: 65mA (@55ns) operating current

I-grade: 55mA (@70ns) operating current

TEMPERATURE

-40

OPERATING

C to +70

C to +85

Very Low Power/Voltage CMOS SRAM

256K X 16 bit

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

A12

. reserves the right to modify document contents without notice.

2.4V ~ 5.5V

RANGE

Vcc

55ns :3.0~5.5V

70ns :2.7~5.5V

SPEED

55 /70

(

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

The BS616LV4017 is a high performance, very low power CMOS Static

Random Access Memory organized as 262,144 words by 16 bits and

operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.45uA at 3.0V/25

Easy memory expansion is provided by an active LOW chip enable (CE)

,active LOW output enable(OE) and three-state output drivers.

The BS616LV4017 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV4017 is available in DICE form, JEDEC standard 44-pin

TSOP Type II package and 48-ball BGA package.

ns )

BLOCK DIAGRAM

DESCRIPTION

Vcc=

DQ0

DQ15

A17

A16

A15

A14

A13

A12

Vcc

Gnd

10uA

5uA

( I

STANDBY

3.0V

CCSB1

POWER DISSIPATION

Address

Buffer

, Max )

Input

C and maximum access time of 55ns at 3.0V/85

Vcc=

Control

30uA

60uA

5.0V

Vcc =

Output

Buffer

Input

Data

21mA

22mA

Data

70ns

Decoder

Operating

Row

( I

3.0V

, Max )

2048

Vcc =

55mA

53mA

70ns

BS616LV4017

5.0V

A11

A10

Column Decoder

Address Input Buffer

Write Driver

Memory Array

2048 x 2048

Sense Amp

Column I/O

A9 A8 A7

TSOP2-44

BGA-48-0608

DICE

TSOP2-44

DICE

BGA-48-0608

128

PKG

2048

Revision 2.1

Jan.

TYPE

2004

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