BS62LV2006TCP70 BSI Brilliance Semiconductor, BS62LV2006TCP70 Datasheet

BS62LV2006TCP70

Manufacturer Part Number

BS62LV2006TCP70

Description

BS62LV2006TCP70Very Low Power/Voltage CMOS SRAM 256K X 8 bit

Manufacturer

BSI Brilliance Semiconductor

Datasheet

1.BS62LV2006TCP70.pdf (9 pages)

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Company:

Bonase Electronics (HK) Co., Limited

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BS62LV2006TCP70

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Meier Automation Equipment Co., Limited

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BS62LV2006TCP70

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BSI

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R0201-BS62LV2006

• Wide Vcc operation voltage : 2.4V~5.5V

• Very low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

BS62LV2006DC

BS62LV2006TC

BS62LV2006STC

BS62LV2006SC

BS62LV2006DI

BS62LV2006TI

BS62LV2006STI

BS62LV2006SI

Brilliance Semiconductor, Inc

PIN CONFIGURATIONS

PRODUCT FAMILY

FEATURES

VCC

CE2

-55

-70

Vcc = 3.0V

Vcc = 5.0V

A11

A13

A15

A17

A16

A14

A12

PRODUCT

FAMILY

GND

DQ0

DQ1

DQ2

A17

A16

A14

A12

BSI

55ns

70ns

BS62LV2006SC

BS62LV2006SI

BS62LV2006TC

BS62LV2006STC

BS62LV2006TI

BS62LV2006STI

C-grade : 22mA (@55ns) operating current

C-grade : 17mA (@70ns) operating current

0.3uA (Typ.) CMOS standby current

C-grade : 53mA (@55ns) operating current

C-grade : 43mA (@70ns) operating current

1.0uA (Typ.) CMOS standby current

I- grade : 23mA (@55ns) operating current

I- grade : 18mA (@70ns) operating current

I- grade : 55mA (@55ns) operating current

I- grade : 45mA (@70ns) operating current

TEMPERATURE

-40

OPERATING

C to +70

C to +85

Very Low Power/Voltage CMOS SRAM

256K X 8 bit

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

2.4V ~ 5.5V

2.4V ~5.5V

. reserves the right to modify document contents without notice.

RANGE

Vcc

55ns :3.0~5.5V

70ns :2.7~5.5V

SPEED

55/70

( ns )

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

The BS62LV2006 is a high performance, very low power CMOS

Static Random Access Memory organized as 262,144 words by 8 bits

and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.3uA at 3.0V /25

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV2006 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV2006 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.

DESCRIPTION

BLOCK DIAGRAM

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE1

CE2

A15

A16

A14

A12

Vdd

Gnd

A13

A17

Vcc=3.0V

3.0uA

5.0uA

( I

STANDBY

CCSB1

Address

Buffer

Input

, Max )

POWER DISSIPATION

C and maximum access time of 55ns at 3.0V /85

Control

Vcc=5.0V

10uA

30uA

Output

Data

Buffer

Data

Buffer

Input

Decoder

Vcc=3.0V

Row

17mA

18mA

70ns

Operating

( I

1024

, Max )

BS62LV2006

Vcc=5.0V

43mA

45mA

A11

70ns

Address Input Buffer

Column Decoder

Memory Array

A8 A3 A2 A1

Write Driver

Sense Amp

1024 x 2048

Column I/O

DICE

TSOP-32

STSOP-32

SOP-32

DICE

TSOP-32

STSOP-32

SOP-32

2048

PKG TYPE

256

Revision 1.1

Jan.

A10

2004

Related parts for BS62LV2006TCP70

BS62LV2006TCP70 Summary of contents

Page 1

Very Low Power/Voltage CMOS SRAM BSI 256K X 8 bit FEATURES • Wide Vcc operation voltage : 2.4V~5.5V • Very low power consumption : Vcc = 3.0V C-grade : 22mA (@55ns) operating current I- grade : 23mA (@55ns) operating current ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A17 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (3) Voltage Guaranteed Input High V IH (3) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX RC t ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WR1 t t E2LAX WR2 t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

BSI ORDERING INFORMATION BS62LV2006 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...

Page 9

BSI PACKAGE DIMENSIONS (continued) TSOP - 32 SOP -32 R0201-BS62LV2006 b WITH PLATING BASE METAL SECTION A-A 9 BS62LV2006 Revision 1.1 Jan. 2004 ...

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