NTE65101 NTE ELECTRONICS, NTE65101 Datasheet
NTE65101
Specifications of NTE65101
Related parts for NTE65101
NTE65101 Summary of contents
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... Static Random Access Memory (SRAM) Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Sepa- rate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention at a power supply as low as 2V over temperature readily allows design into applications using battery backup for nonvolatility ...
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DC Electrical Characteristics: (V Parameter Input Current Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Output Leakage Current Operating Current Standby Current Note 2. Typical values are T Note 3. Current through all inputs and outputs ...
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AC Operating Conditions and Characteristics (Cont’d): (Full operating voltage and temperature Read Cycle: Read Cycle Time Access Time Read Cycle (Cont’d): Address Setup Time Address Hold Time Chip Enable (CE1) to Output Chip Enable (CE2) to Output Output Disable to ...
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GND 1.300 (33.0) .100 (2.54) 1.000 (25.4) Pin Connection Diagram R ...