LM5111-1M National Semiconductor, LM5111-1M Datasheet
LM5111-1M
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LM5111-1M Summary of contents
Page 1
... LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and effi- ciency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads ...
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... Ordering Information Order Number Package Type LM5111-1M LM5111-1MX LM5111-2M LM5111-2MX LM5111-3M LM5111-3MX Block Diagram www.national.com NSC Package Drawing SOIC-8 M08A SOIC-8 M08A SOIC-8 M08A SOIC-8 M08A SOIC-8 M08A SOIC-8 M08A Block Diagram of LM5111 2 Supplied As Shipped in anti-static units, 95 Units/Rail 2500 shipped in Tape & Reel ...
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... Positive output supply CC 7 OUT_A. Output for the ‘A’ side driver Connect Configuration Table Part Number “A” Output Configuration LM5111-1M Non-Inverting LM5111-2M Inverting LM5111-3M Inverting Description TTL compatible thresholds. Connect to power ground. TTL compatible thresholds. Voltage swing of this output is from V The output stage is capable of sourcing 3A and sinking 5A ...
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... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications Electrical Characteristics T = −40˚C to +125˚ 12V Symbol Parameter V Operating Range Under Voltage Lockout CCR CC (rising Under Voltage Lockout CCH CC Hysteresis ...
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Electrical Characteristics T = −40˚C to +125˚ 12V Symbol Parameter SWITCHING CHARACTERISTICS td1 Propagation Delay Time Low to High, IN rising (IN to OUT) td2 Propagation Delay Time High to Low, IN falling (IN to ...
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Typical Performance Characteristics Supply Current vs Frequency Rise and Fall Time vs Supply Voltage Rise and Fall Time vs Capacitive Load www.national.com Supply Current vs Capacitive Load 20112310 Rise and Fall Time vs Temperature 20112312 Delay Time vs Supply Voltage ...
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... The efficiency loss for parallel operation has been characterized at various loads, supply voltages and operating frequencies. The power dissipation in the LM5111 increases be less than 1% relative to the dual driver configuration when operated as a single driver with inputs/ outputs connected. ...
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... JA quency of 300 kHz and V P DRIVER If both channels of the LM5111 are operating at equal fre- quency with equivalent loads, the total losses will be twice as this value which is 0.216W. In addition to the above gate charge power dissipation, - transient power is dissipated in the driver during output transitions ...
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... T = 0.236 x 170 = 40.1˚C RISE CONTINUOUS CURRENT RATING OF LM5111 The LM5111 can deliver pulsed source/sink currents of 3A and 5A to capacitive loads. In applications requiring continu- ous load current (resistive or inductive loads), package power dissipation, limits the LM5111 current capability far below the 5A sink/3A source capability. Rated continuous current can be estimated both when sourcing current to or sinking current from the load ...
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... BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...