NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 47

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND01G-B2B, NAND02G-B2C
Figure 21. Data Input Latch AC waveforms
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
I/O
CL
AL
W
E
RB
I/O
E
R
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(Read Cycle time)
Data Out
tRHRL
(R High Holdtime)
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
Last
tEHQZ
Data Out
tRLQV
tWLWH
tWHDX
(E Hold time)
tWHEH
DC and AC parameters
tRHQZ
(CL Hold time)
tWHCLH
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