NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 50
NAND01GW3B2BN6E
Manufacturer Part Number
NAND01GW3B2BN6E
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Specifications of NAND01GW3B2BN6E
Memory Type
Flash
Memory Size
1GB
Access Time
25µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Interface
Serial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2BN6E
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Figure 26. Page program AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
50/60
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
tWLWL
(Write Cycle time)
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
Address Input
cycle 4
Add.N
cycle 5
Add.N
tWLWL
N
tWHWH
Data Input
(Program Busy time)
tWHBL
Last
Confirm
NAND01G-B2B, NAND02G-B2C
tBLBH2
Code
tWLWL
10h
Program
Page
Read Status Register
70h
SR0
ai13110b