MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 10

• Manufacturer Part Number: MMBZ33VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL

• Reverse Stand-off Voltage Vrwm: 26V
• Breakdown Voltage Range: 31.35V To 34.65V
• Clamping Voltage Vc Max: 46V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 870mA
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
PPM
(1) MMBZ5V6AL: unidirectional
(2) MMBZ5V6AL: bidirectional
(3) MMBZ6V8AL: unidirectional
(4) MMBZ6V8AL: bidirectional
250
200
150
100
d
10
10
50
10
1
3
2
10
T
unidirectional and bidirectional
exponential pulse duration (rectangular
waveform); typical values
0
f = 1 MHz; T
voltage; typical values
Rated peak pulse power as a function of
Diode capacitance as a function of reverse
−2
amb
= 25 °C
10
−1
amb
2
= 25 °C
1
(4)
(1)
10
4
(2)
(3)
10
V
R
006aab839
2
006aab320
t
(V)
p
(ms)
Rev. 02 — 10 December 2009
10
Low capacitance unidirectional double ESD protection diodes
6
3
Fig 4.
Fig 6.
P
PPM(25°C)
P
(pF)
PPM
C
(1) MMBZ10VAL: unidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ15VAL: bidirectional
(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional
150
100
d
1.2
0.8
0.4
50
0
0
0
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(3)
(2)
(1)
50
amb
MMBZxAL series
5
= 25 °C
100
(2)
(3)
10
150
© NXP B.V. 2009. All rights reserved.
V
R
006aab840
T
006aab321
(V)
j
(°C)
(4)
(5)
(6)
200
15
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