MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 3
MMBZ33VAL
Manufacturer Part Number
MMBZ33VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ33VAL
Reverse Stand-off Voltage Vrwm
26V
Breakdown Voltage Range
31.35V To 34.65V
Clamping Voltage Vc Max
46V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
870mA
Diode Case
RoHS Compliant
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NXP Semiconductors
3. Ordering information
4. Marking
MMBZXAL_SER_2
Product data sheet
Table 4.
Table 5.
[1]
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Package
Name
-
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Description
plastic surface-mounted package; 3 leads
Marking code
RR*
RS*
RT*
RU*
RV*
*H1
*H2
*H3
*H4
*H5
*H6
MMBZxAL series
[1]
© NXP B.V. 2009. All rights reserved.
SOT23
Version
3 of 17
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