BLL6H0514-25 NXP Semiconductors, BLL6H0514-25 Datasheet
BLL6H0514-25
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BLL6H0514-25 Summary of contents
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... BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance case Mode of operation f (MHz) pulsed RF 960 to 1215 1200 to 1400 CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... Thermal characteristics Parameter transient thermal impedance from junction to case All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor Simplified outline Graphic symbol 1 [ Min - −0.5 - − ...
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... RL in η droop(pulse 6.1 Ruggedness in class-AB operation The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions mA BLL6H0514-25_4 Product data sheet DC characteristics C; per section unless otherwise specified. drain-source breakdown voltage V gate-source threshold voltage drain leakage current ...
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... DS L (μs) (%) (V) (W) 128 300 All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor Z L Ω 6.11 + j11.1 7.00 + j16.0 7.39 + j14.2 7.0 + j16.0 5.77 + j13.85 7.39 + j14.2 6.11 + j11.1 5.00 + j10.0 drain Z L 001aaf059 η ...
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... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor 6.15 and thickness = 0.64 mm. r Value μ ...
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... Load power as a function of input power; typical values BLL6H0514-25_4 Product data sheet 001aak883 (1) (2) (3) 400 600 P (mW 300 μs; δ Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor (dB) (1) ( 300 μs; δ ...
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... L = 300 μs; δ Fig (dB 1. Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor (dB) η 1.15 1.25 1.35 = 300 μs; δ mA Power gain and drain efficiency as function of frequency ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor 2.21 20.45 5.97 14.27 ...
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... X-axis is corrected to mW. Product data sheet Objective data sheet Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor Change notice Supersedes - BLL6H0514-25_3 - BLL6H0514-25_2 - BLL6H0514-25_1 - - © NXP B.V. 2010. All rights reserved ...
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... In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 BLL6H0514-25 LDMOS driver transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H0514-25_4 All rights reserved. Date of release: 30 March 2010 ...