BLL6H0514-25 NXP Semiconductors, BLL6H0514-25 Datasheet - Page 4

• Manufacturer Part Number: BLL6H0514-25
• Description: LDMOS,RF,25W,500M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514-25

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 2.5A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Application information
Table 9.
Typical RF performance at T
BLL6H0514-25_4
Product data sheet
Mode of operation
pulsed RF
Application information
7.1 Impedance information
7.2 Typical data
Table 8.
Typical values per section unless otherwise specified.
f
MHz
950
1000
1050
1100
1150
1200
1300
1400
Fig 1.
960 to 1215
f
(MHz)
1200 to 1400
case
= 25
Definition of transistor impedance
Typical impedance
°
C; I
Dq
All information provided in this document is subject to legal disclaimers.
= 50 mA; in a class-AB application circuit.
t
(μs)
128
300
p
Rev. 04 — 30 March 2010
δ
(%)
10
10
Z
Ω
2.37 + j3.3
2.44 + j2.65
2.34 + j2.67
2.56 + j2.06
2.54 + j1.70
2.25 + j1.29
2.21 + j0.15
2.46 − j0.52
V
(V)
50
50
S
DS
gate
P
(W)
25
25
Z
L
S
G
(dB)
21
19
p
001aaf059
RL
(dB)
10
10
Z
drain
L
in
η
(%)
58
50
D
BLL6H0514-25
Z
Ω
6.11 + j11.1
7.00 + j16.0
7.39 + j14.2
7.0 + j16.0
5.77 + j13.85
7.39 + j14.2
6.11 + j11.1
5.00 + j10.0
L
P
(dB)
0.05
0.05
droop(pulse)
LDMOS driver transistor
© NXP B.V. 2010. All rights reserved.
t
(ns)
8
8
r
6
6
t
(ns)
4 of 12
f