BLS6G3135-120 NXP Semiconductors, BLS6G3135-120 Datasheet - Page 10

• Manufacturer Part Number: BLS6G3135-120
• Description: LDMOS,RF,120W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 7.2A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G3135-120_6G3135S-120_2
Product data sheet
Document ID
BLS6G3135-120_6G3135S-120_2
Modifications:
BLS6G3135-120_6G3135S-120_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
S-Band
VSWR
Abbreviations
Release date
20080529
20070814
BLS6G3135-120; BLS6G3135S-120
•
Section 8 on page
Rev. 02 — 29 May 2008
Description
Laterally Diffused Metal Oxide Semiconductor
Lateral Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Preliminary data sheet
7: Component layout was added
LDMOS S-Band radar power transistor
Change notice
-
-
Supersedes
BLS6G3135-120_
6G3135S-120_1
-
© NXP B.V. 2008. All rights reserved.
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