BLS6G3135-120 NXP Semiconductors, BLS6G3135-120 Datasheet - Page 6

• Manufacturer Part Number: BLS6G3135-120
• Description: LDMOS,RF,120W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 7.2A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G3135-120_6G3135S-120_2
Product data sheet
Fig 8. Drain efficiency as a function of load power;
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(%)
D
50
40
30
20
10
0
V
typical values
0
DS
= 32 V; I
40
Dq
= 100 mA; t
80
p
= 100 s; = 20 %.
120
BLS6G3135-120; BLS6G3135S-120
(1)
(3)
001aag829
P
L
(W)
(2)
160
Rev. 02 — 29 May 2008
Fig 9. Load power as a function of input power;
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(W)
P
160
L
120
80
40
0
V
typical values
0
DS
= 32 V; I
LDMOS S-Band radar power transistor
5
Dq
= 100 mA; t
10
(2)
p
= 100 s; = 20 %.
15
(1)
© NXP B.V. 2008. All rights reserved.
(3)
001aag830
P
i
(W)
20
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