BLS6G3135-20 NXP Semiconductors, BLS6G3135-20 Datasheet - Page 6

• Manufacturer Part Number: BLS6G3135-20
• Description: LDMOS,RF,20W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 2.1A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-608A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G3135-20_6G3135S-20_3
Product data sheet
Fig 6.
Fig 8.
(dB)
(%)
G
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
D
p
17
15
13
11
60
50
40
30
20
10
9
7
3
0
V
P
Power gain and drain efficiency as functions of
frequency; typical values
V
Efficiency as a function of load power; typical
values
DS
L
DS
= 20 W.
= 32 V; I
= 32 V; I
Dq
Dq
3.2
10
= 100 mA; t
= 50 mA; t
G
p
D
p
p
= 100 s; = 20 %.
= 50 s; = 20 %;
3.4
20
(1)
f (GHz)
P
L
001aaf987
001aaf989
(W)
(2)
(3)
BLS6G3135-20; BLS6G3135S-20
3.6
30
Rev. 03 — 3 March 2009
50
40
30
20
10
0
(%)
D
Fig 7.
Fig 9.
(dB)
(W)
G
P
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
L
p
16
14
12
10
30
20
10
8
6
0
0
V
Power gain as a function of load power; typical
values
0
V
Load power as a function of input power;
typical values
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-Band radar power transistor
Dq
Dq
0.4
10
= 50 mA; t
= 50 mA; t
p
p
(2) (3)
= 100 s; = 20 %.
= 100 s; = 20 %.
0.8
20
© NXP B.V. 2009. All rights reserved.
P
P
L
(1)
i
001aaf988
001aaf990
(W)
(W)
(2)
(3)
(1)
1.2
30
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