BLS6G3135-20 NXP Semiconductors, BLS6G3135-20 Datasheet - Page 9

• Manufacturer Part Number: BLS6G3135-20
• Description: LDMOS,RF,20W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 2.1A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-608A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Fig 12. Package outline SOT608B
BLS6G3135-20_6G3135S-20_3
Product data sheet
Ceramic earless flanged package; 2 leads
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
inch
mm
VERSION
OUTLINE
SOT608B
0.182
0.148
4.62
3.76
A
0.285
0.275
7.24
6.99
b
0.006
0.004
0.15
0.10
c
IEC
H
A
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D
1
10.21
10.01
0.402
0.394
JEDEC
E
U
D
b
1
D
1
10.29
10.03
0.405
0.395
REFERENCES
E
BLS6G3135-20; BLS6G3135S-20
1
3
1
2
Rev. 03 — 3 March 2009
0.045
0.035
1.14
0.89
F
0
w
15.75
14.73
0.620
0.580
1
JEITA
F
M
H
A
scale
A
0.067
0.053
M
1.70
1.35
Q
5 mm
10.24
0.403
0.393
9.98
U
1
U
10.24
0.403
0.393
2
9.98
U
2
E
LDMOS S-Band radar power transistor
1
0.020
0.51
w
1
Q
PROJECTION
EUROPEAN
c
E
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
06-11-27
06-12-06
SOT608B
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