FF900R12IP4D Infineon Technologies, FF900R12IP4D Datasheet - Page 5
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FF900R12IP4D
Manufacturer Part Number
FF900R12IP4D
Description
IGBT Module
Manufacturer
Infineon Technologies
Specifications of FF900R12IP4D
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
900A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
5.1kW
No. Of Pins
10
Collector Emitter Saturation Voltage Vce(sat)
1.7V
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
900.0 A
Vce(sat) (typ)
1.7 V
Configuration
dual
Technology
IGBT4
Housing
PrimePACK 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Technische Information / technical information
IGBT-Module
IGBT-modules
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1800
1600
1400
1200
1000
1800
1600
1400
1200
1000
$
$
$
$
800
600
400
200
800
600
400
200
0
0
0,0
$
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$ 7
$ 7
$ 7
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3
3
3
3
5
3
3
3
3
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"
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"
$
$
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3
3
3
3
2<= * PU
2<= * + PU
2<= * +P U
2<= * PU
2<= * + PU
2<= * +P U
6
0,5
7
7
7
7
,AM2 9
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7
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8
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3
3
3
3
1,5
R
R
R
R
9
FF900R12IP4D
R
R
R
R
R
R
R
R
3
3
3
3
2,0
10
T
T
T
T
3T
3T
3T
3T
T
T
T
T
R
R
R
R
2,5
11
3T
3T
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3,0
12
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:.- * R,'TE :.cc * R,'T
:.- * R,'TE :.cc * R,'T
:.- * R,'TE :.cc * R,'T
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"W( * a+P "E GW.- * + Q ]E GW.cc * + Q ]E "'( * Q
4
4
4
4
3
3
3
3
1800
1600
1400
1200
1000
$
$
$
$
800
600
400
200
400
350
300
250
200
150
100
3 $
3 $
3 $
3 $
50
0
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
$ 7
$ 7
$ 7
$ 7
3
3
3
3
0
200 400 600 800 1000 1200 1400 1600 1800
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,AM2 9
,AM2 9
,AM2 9
"W( * + "
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"W( * +P"
"W( * + "
"W( * ++"
"W( * "
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:.-E 2<= * +P U
:.ccE 2<= * + PU
:.ccE 2<= * +P U
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,AM2
,AM2
,AM2
,AM2
,AM2
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3
3
3
3
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R
R
R
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Vorläufige Daten
preliminary data
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3
3
3
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R
R
R
3T
3T
3T
3T
T
T
T
T
R
R
R
R
T
T
T
T
3T
3T
3T
3T
"
"
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"