FF900R12IP4D Infineon Technologies, FF900R12IP4D Datasheet - Page 7

• Manufacturer Part Number: FF900R12IP4D
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF900R12IP4D

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.7V
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.7 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
:_^p * R,nT
:_^p * R,nT
GW.- * + Q ]E "'( * Q
GW.- * + Q ]E "'( * Q
2
2
‚KYi' * R T
‚KYi' * R T
:_^p * R,nT
:_^p * R,nT
GW.- * + Q ]E "'( * Q
GW.- * + Q ]E "'( * Q
2
2
‚KYi' * R T
‚KYi' * R T
4
4
4
4
3
3
3
3
160
140
120
100
100
0,1
3 $
3 $
3 $
3 $
80
60
40
20
10
0
1
0,001
0
3 3 3 3
9#
9#
9#
9#
200 400 600 800 1000 1200 1400 1600 1800
%
%
%
%
:_^pE 2<= * + PU
:_^pE 2<= * +P U
‚KYi' %
0,01
4
4
4
4
9
9
9
9
"
"
"
"
3
3
3
3
\wC&79y
\w y
,n w y
%
%
%
%
0,1
R
R
R
R
R
R
R
R
w y
+
E+
E
FF900R12IP4D
9
9
9
9
T
T
T
T
3T
3T
3T
3T
E
E +
3
3
3
3
1
E P
EP
EQ
EQ
10
7
:_^p * RGWT
:_^p * RGWT
:_^p * RGWT
:_^p * RGWT
,n *
,n *
,n *
,n *
O2
O2
O2
O2
O2
O2
O2
O2
G * R2T
G * R2T
G * R2T
G * R2T
4
4
100000
4
4
10000
3
3
3
3
1000
140
120
100
100
3 $
3 $
3 $
3 $
80
60
40
20
2
2
2
2
0
0,0
0
E "'( * Q
E "'( * Q
E "'( * Q
E "'( * Q
2,0
20
%
%
%
%
:_^pE 2<= * + PU
:_^pE 2<= * +P U
GKƒ>
7
7
7
7
3
3
3
3
4,0
40
9
9
9
9
"
"
"
"
6,0
60
3
3
3
3
R
R
R
R
2' wU y
GW w]y
8,0 10,0 12,0 14,0 16,0
R
R
R
R
80
R
R
R
R
R
R
R
R
Vorläufige Daten
preliminary data
3T
3T
3T
3T
100 120 140 160
T
T
T
T
3T
3T
3T
3T
T
T
T
T