FS25R12W1T4 Infineon Technologies, FS25R12W1T4 Datasheet - Page 4

• Manufacturer Part Number: FS25R12W1T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FS25R12W1T4

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 205W
• No. Of Pins: 18
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPACK 1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 30A rms per connector pin.
FS25R12W1T4
4
Vorläufige Daten
preliminary data