FS25R12W1T4 Infineon Technologies, FS25R12W1T4 Datasheet - Page 8
FS25R12W1T4
Manufacturer Part Number
FS25R12W1T4
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FS25R12W1T4.pdf
(9 pages)
Specifications of FS25R12W1T4
Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
25A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
205W
No. Of Pins
18
Collector Emitter Saturation Voltage Vce(sat)
1.85V
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
25.0 A
Vce(sat) (typ)
1.85 V
Technology
IGBT4
Housing
EasyPACK 1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS25R12W1T4
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS25R12W1T4_B11
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FS25R12W1T4
ϑ
8
Infineon
Vorläufige Daten
preliminary data